專利認證

專利名稱 專利地區 專利編號
蕭特基二極體結構及其製造方法 R.O.C I226709
具有高崩潰電壓及低逆向漏電流的蕭特基二極體 R.O.C I234289
蕭特基二極體及其製造方法 R.O.C I237901
蕭特基阻障二極體及其製造方法 R.O.C I263344
功率蕭特基整流裝置及其製造方法 CN 362744
具有高崩潰電壓及低逆向漏電流的蕭特基二極體 CN 312861
蕭特基二極體結構及其製造方法 CN 449005
Two mask schottky diode with locos structure USA 6,936,905
High switching speed two mask Schottky diode with high field breakdown USA 6,998,694
Schottky diode with high field breakdown and low reverse leakage current USA 6,825,073
Schottky barrier diode and method of making the same-Trench USA 7,064,408
Schottky barrier diode and method of making the same USA 7,078,780
Silicon carbide Schottky diode and method of making the same USA 7.368.371
High switching speed two mask schottky diode with high field breakdown USA 7.491.633
Method of forming low forward voltage Schottky barrier diode with LOCOS structure therein USA 11/453,799