•The structure design of Trench Schottky can reduce the surface electric field of schottky Diodes and reduce the Schottky barrier lowering effect, so the Trench structure can use low work function Schottky metal, reduce the on-voltage without enduring high reverse leakage current.
•The Trench structure can reduce the number of minority carriers injected into the drift region, thereby minimizing the amount of stored charge and increasing the switching speed. Compared with Schottky diodes, the low current start-up performance is better, and it can provide better energy efficiency conversion, which meets the six-level energy efficiency requirements.
•IO=1A~40A ; VR=30V~200V
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•Using the structure principle of VDMOS (Vertical Double Diffused Metal-Oxide Semiconductor Field Effect Transistor), the gate (G) and source (S) of VDMOS are paralleled as the anode, and the drain (D) is used as the cathode. 1. No Schottky contacts, with lower VF than Schottky diodes. 2. Faster response time, faster switching speed than general diodes. 3. Has higher reliability and can work at higher temperatures. 4. Has higher with voltage than Schottky diodes. •IO=3A~40A ; VR=40V~300V
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•IO=0.015A~3.0A ; VR=20V~200V
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• A switching diode is a diode with a switching function that allows current to flow (ON) when voltage is applied in the forward direction and stops current flow (OFF) when voltage is applied in the reverse direction. Short reverse recovery time (trr) for switching small signals up to 100 mA.
•IO=0.1A~0.3A ; VR=20V~200V
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